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Topic Name: Increasingly fast transistors containing carbon nanotubes…
Category: Nanocharacterization
Research persons: Arnaud Louarn ,Henri Happy,Vincent Derycke
Location: Scientific city - Avenue Poincaré, BP 60069, France
Details
Researchers of Institute of electronics, micro-electronics and nanotechnology (IEMN/CNRS - Universities Lille 1 and Valencians, higher Institute of electronics and the numerical one) and Service of Physics of the State Condensé of the ECA managed to produce transistors starting from carbon nanotubes on silicon substrate. These transistors, mainly used as ordered switch, reach cut-off frequencies of 30 GHz (1), which improves of a factor 4 the last record obtained by the same teams in August 2006. This result opens to new prospects for the applications general public requiring for the high frequencies of operation.
Molecular electronics aims to develop components based on various types of nano-objects and the systems for the data processing. It is this type of technology which is, for example, used for display systems such as electronic paper. To carry out the elementary components, one generally uses elements organic, like the polymers, which are deposited on surfaces by simple processes, identical to the techniques of impression paper (jet of ink). However these materials are equipped with a low electronic mobility, which limits in frequency the transport of the current, therefore the frequency of commutation of each elementary transistor, and restricts the applications of this technology. The carbon nanotubes, as for them, are characterized by a great mobility electronic, compatible with applications in fast electronics; they can also be deposited by inexpensive technological processes
Researchers of the IEMN and ECA supported by project “PNANO HF-CNT” of the national Agency of research, used a technique called “di-electrophoresis” to obtain a uniform deposit of a great number of nanotubes aligned. They managed to produce transistors containing carbon nanotubes on silicon substrate reaching of the cut-off frequencies of 30 GHz. This result improves of a factor 4 the last record obtained by the same teams in August 2006. This process of development implemented is carried out at ambient temperature, which makes it also completely compatible with the other substrates at low cost (glass, plastic…) and to new prospects for the applications general public openopens thus requiring for the high frequencies of operation.
About The Researchers--
Researchers Arnaud Louarn T 03 20 19 78 60 arnaud.le-louarn@iemn.univ-lille1.fr
Henri Happy T 03 20 19 78 58 henri.happy@iemn.univ-lille1.fr
Vincent Derycke T 01 69 08 46 79 vincent.derycke@cea.fr
Funded
IEMN -http://www.iemn.univ-lille1.fr/
and ECA - http://www.eca.co.uk/
In The Images-
Electronic microscopy of a transistor containing carbon nanotubes for applications high frequency. The insert shows the aligned nanotubes. © Arnaud Louarn - IEMN, CNRS (this image is available near the photographic library of CNRS, phototheque@cnrs-bellevue.fr)
Notes :
1) GHz : GigaHertz = 109 hertz
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