Trade.Information

Product Name: PSRAM Technical Notes

Product Description

CellularRAM Memory Operation
Designer's Toolbox
Upgrade and Migration Paths
General Technical Notes

CellularRAM Memory Operation

File	Title and Description
	TN-45-02: CellularRAM Asynchronous and Mixed-Mode Slow-Clock WRITE Concerns - Technical note discussing the use of Micron CellularRAM-based devices in Mixed Mode operation and slow clock speeds.
	TN-45-04: CellularRAM Multiplexed Async/Burst Operation - Technical note discussing multiplexing a non-multiplexed CellularRAM device at the substrate level.
	TN-45-23: Using CellularRAM Memory on a NOR FLASH Bus - Technical note discussing design considerations when placing a CellularRAM device on a NOR Flash bus.
	TN-45-25: WAIT Alignment for Micron CellularRAM Devices - Describes the implementation of WAIT functionality for asynchronous and burst operations.

Designer's Toolbox

Design Resources

File	Title and Description
	TN-45-10: Designing Applications with the x16 Burst A/D Multiplexed Interface - Technical note discussing the differences between a Burst non-A/D MUX and Burst A/D MUX device.
	TN-45-15: Row Boundary Crossing Funtionality in CellularRAM Memory - Technical note to assist customers in understanding row boundary crossing for Micron CellularRAM memory devices.
	TN-45-20: Low-Power Options for Async/Page CellularRAM - Technical note discussing the low-power options available to customers on the Async/Page CellularRAM memory devices.
	TN-45-22: Variable vs. Fixed Latency CellularRAM™ Operation - This technical note assists designers in understanding the differences between CellularRAM variable and fixed latency operations.

Replacing Existing Memory

File	Title and Description
	TN-45-13: Using CellularRAM Memory to Replace UtRAM - Technical note enabling customers to migrate a 128Mb UtRAM design (K1B2816B6M) to the Micron 128Mb CellularRAM memory device (MT45W8MW16B). Both hardware and software changes are covered.
	TN-45-14: Using CellularRAM Memory to Replace Fujitsu 3V FCRAM - Technical note enabling customers to replace Fujitsu 3V FCRAM with Micron CellularRAM memory.
	TN-45-16: Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM - Technical note enabling customers to replace Fujitsu 1.8V FCRAM with Micron CellularRAM memory.
	TN-45-17: Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM - Technical note to enable customers to migrate a single- or dual-chip select SRAM design to Micron CellularRAM memory devices. Both hardware and software changes are covered.
	TN-45-18: Using CellularRAM Memory to Replace NEC Mobile Specified RAM (µPD46128512) - Technical note to enable customers to migrate a 128Mb NEC Mobile Specified RAM design (µPD46128512) to the Micron 128Mb CellularRAM memory device (MT45W8MW16B). Both hardware and software changes are covered.

Upgrade and Migration Paths

File	Title and Description
	TN-45-01: Functional Differences Between CellularRAM 1.0 and CellularRAM 1.5 - Technical note discussing the functional difference between the CellularRAM 1.0 and CellularRAM 1.5 memory devices.
	TN-45-06: Density Migration for x16 Multiplexed PSRAM Introduction - Technical note discussing the differences that a design will need to account for when migrating a burst multiplexed device from 16Mb through 64Mb.
	TN-45-07: Implementing CellularRAM™ 2.0 x32 with Two CellularRAM 1.5 x16 Devices - Technical note that documents how the x32 CR2.0 memory interface can be emulated using a two-die stack of x16 CR 1.5 devices.
	TN-45-08: 64Mb Async/Page CellularRAM P25A to P25Z Transition Guide - Technical note to assist customers with migrating a design based on the async/page MT45W4MW16P (P25A) to the MT45W4MW16PC (P25Z).
	TN-45-09: 64Mb Burst CellularRAM P25A to P25Z Transition Guide - Technical note to assist customers with migrating a design based on the async/page/burst MT45W4MW16B (P25A) to MT45W4MW16BC (P25Z).
	TN-45-24: Fixed-Latency Operation in CellularRAM™ 1.0 Devices - Technical note to detail how Micron has enhanced CellularRAM CR1.0 functionality.

General Technical Notes

Company Details

Follow Micron's progression since its inception in 1978 to becoming one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAM, Flash memory, CMOS image... more

File	Description
	TN-00-01: Moisture Absorption in Plastic Packages
	TN-00-06: Bypass Capacitor Selection for High-Speed Designs
	TN-00-07: IBIS Behavioral Models
	TN-00-08: Thermal Applications
	TN-00-09: Accelerate Design Cycles With Micron Simulation Models
	TN-00-14: Understanding the Quality and Reliability Requirements for Bare Die Applications
	TN-00-15: Recommended Soldering Parameters
	TN-00-17: Timing Specification Derating for High Capacitance Output Loading
	TN-00-18: Uprating of Semiconductors for High-Temperature Applications
	TN-00-19: Thinning Considerations for Wafer Products
	TN-00-20: The Value of Signal Integrity