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Cree’s New GaN Transistors provide exceptional linear power and efficiency for WiMAX and broadband wireless access applications .
:: 21 March, 2007
Cree, Inc. (Nasdaq: CREE) announced today that it is shipping sample quantities of three new gallium nitride (GaN) high electron mobility transistors (HEMT). Optimized for high efficiency, high gain and wide bandwidth, these devices provide exceptional linear power and efficiency for WiMAX and broadband wireless access applications operating between 2.3 GHz and 3.9 GHz. With this announcement, Cree continues to set the performance bar for orthogonal frequency-division multiplexing (OFDM) linear power transistors.
The CGH27015S, contained in a small 3-mm x 3-mm plastic over-mold QFN package, typically produces 2.5 watts of average output power and 28-percent drain efficiency over the frequency range of 2.3 GHz to 2.9 GHz. This represents up to a 40-percent improvement in device efficiency when compared with traditional technologies such as silicon LDMOS or GaAs under WiMAX signals and requirements (802.16-2004). It also features 15 dB of small-signal gain and 2.0-percent error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 volts.
The CGH35015S, also provided in an over-mold QFN package, typically produces more than 2.5 watts of average power and 28-percent drain efficiency with typical small-signal gain of 13 dB over the frequency range of 3.3 to 3.9 GHz. This represents up to a 50-percent improvement in device efficiency when compared with silicon LDMOS or GaAs under WiMAX signals. In addition, the CGH35030F transistor provides 4 watts of average power with 23-percent efficiency over the 3.3 to 3.9-GHz frequency range. This component features more than 11-dB gain and two-percent error vector magnitude (EVM) under OFDM modulation. When employed in an efficiency-enhancement circuit, a pair of these transistors produced more than 10 watts of average power with over 42-percent efficiency in the 3.5 GHz WiMAX band. All three of the new Cree devices are EU RoHS-compliant.
“The CGH27015S and CGH35015S plastic over-mold GaN transistors allow our customers to employ low-cost, high-speed assembly methods while preserving outstanding RF performance with a RoHS-compliant device,” said Jim Milligan, Cree business area manager for RF products. “The CGH35030F provides further flexibility for RF designers needing additional power at high efficiency to enable new system architectures such as distributed wireless base stations employing remote radio heads.”
Additional information about Cree wireless products may be obtained by calling Cree at 919-313-5300 or by visiting www.cree.com/wireless.
About Cree, Inc.
Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of solid-state lighting, power and communications products by significantly increasing their energy performance and efficiency.
Key to Cree’s market advantage is its world-class materials expertise in SiC and GaN for chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products. Cree drives its increased performance technology into multiple applications, including exciting alternatives in brighter and more-tunable light for general illumination, backlighting for more-vivid displays, optimized power management for high-current, switch-mode power supplies and variable-speed motors, and more-effective wireless infrastructure for data and voice communications.
Cree customers range from innovative lighting-fixtures makers to defense-related federal agencies. Cree’s product families include blue and green LED chips, lighting LEDs, LED backlighting solutions, power-switching devices and radio-frequency/wireless devices. For product specifications, please refer to www.cree.com.
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, such as the risk we may encounter delays or other difficulties in ramping up production of our new products, which are currently available for evaluation and testing purposes only; the risk we may be unable to manufacture these products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the rapid development of new technology and competing products that may impair demand or render our products obsolete; the potential lack of customer acceptance for the products; variations in demand for Cree’s products and its customers’ products; the risk we may encounter delays or other difficulties in developing and commercially releasing additional new linear power transistors; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 25, 2006, and subsequent filings.
Media Contact:
Deb Lovig
Marketing Communications
Cree, Inc.
Deb_Lovig@cree.com
(919) 287-7505
Release link: http://www.cree.com/press/press_detail.asp?i=1174401665643
Tags: GaN Transistors , broadband , communications ,
