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Details of A new hybrid transistor

A team of Germanic physicists, of the Institute Hahn-Meitner of Berlin, has made to grow, through one layer of polymers, of nanocavi the semiconductors in order to conceive a new hybrid transistor. A stratagem - the authors of the plan support - that has allowed to obviate to various similar problematic inevitables that are met when hybrid circuits are put to point, and that moreover it has conferred to the new transistor much more robustness regarding those products in past.

The physicists from have before realized a battery, constituted of layers polymer-metal-polymer, made of a situated metallic sheet in a pair of polymer films whose thickness caught up approximately 8 micron. The structure then has been raggiata by means of Ionian fast that they have fluted of the holes in the superficial ones, making then to grow to their inside nanocavi semiconductors, having a diameter of 100 nanometers. In order to render the idea of the dimensions of the structure, enough to remember that in a square centimeter they could be made to grow until 100 million nanocavi semiconductors. Once these operations completed all the battery only need of one added of contacts, on its top and the plan of the battery of layers, because it can work with the same modalities of a transistor.

Nanocavi the semiconductors, that they stop peculiarity electrical workers and optical, are of the monodimensional structures. They come employ you for the construction of systems to nanoscala, like sensors, transistor to effect field, etc. However, even if the hybrid systems catch up a functionality arranged with the organic materials and with the same electronic and optical property of the material semiconductors, they do not catch up one adapted force and mechanical stability so that can be employs to you in ruotine applications. The discovery has been published from the periodical "Applied Physics Letters".