Follow Micron's progression since its inception in 1978 to becoming one of
the world's leading providers of advanced semiconductor solutions. Through its
worldwide operations, Micron manufactures and markets DRAM, Flash memory, CMOS
image sensors, other semiconductor components, and memory modules for use in
leading-edge computing, consumer, networking,server,mobile, and automotive
products.
1978
Micron Technology, Inc., is headquartered in Boise, Idaho, and incorporated
under the laws of the state of Idaho.
1979
Engineers finalize design for a 64K DRAM.
1980
Ground is broken for a 50,000-square-foot wafer fabrication plant on 200 acres
in Boise.
1981
First fabrication facility is completed. First 64K DRAM product is shipped.
1983
First "shrink" of Micron’s 64K DRAM die is completed.
First assembly and test facility is completed.
1984
Micron is reincorporated under the laws of the state of Delaware and becomes a
publicly held company (NASDAQ: DRAM) in June 1984 with the sale of 2.1 million
shares of common stock at an initial price of $14 per share.
256K DRAM is introduced. A second fabrication plant, central utilities plant,
and an assembly and test facility are constructed.
1985
Seven of America's leading semiconductor makers exit the DRAM business due to
a drastic decline in prices for memory.
1986
The U.S. and Japan enter into a semiconductor trade agreement intended to
establish fair market value prices for DRAM.
1987
Micron introduces the 1-megabit DRAM.
1988
Micron introduces the 256K video RAM, 16K, 64K, and 256K fast static RAM, and
add-in memory products assembled by Micron's Memory Applications Group (MAG).
1989
Major portions of a $250 million expansion project, including a third
fabrication facility, are completed.
1990
A second assembly facility is completed.
On November 30, Micron lists its common stock on the New York Stock Exchange,
under the symbol MU.
1991
A new test facility is completed.
Micron begins the transition to the 4-megabit DRAM.
Micron creates Edge Technology, Inc., (a precursor to Micron Electronics) to
manufacture memory-intensive personal computers at competitive prices.
1992
Sampling begins for the 16-megabit DRAM.
1993
Micron’s Fab III is named "Top U.S. Fab of 1993" by Semiconductor
International magazine.
Micron begins a $60 million expansion project.
1994
A 5-for-2 stock split is announced.
Micron is listed on the Fortune 500 for the first time.
Steve Appleton is named President, Chairman, and CEO.
1995
A site near Lehi, Utah, is selected for the new manufacturing complex.
A 2-for-1 stock split is announced.
1996
Micron creates Crucial Technology, a division to market and sell memory
upgrades to end-users.
ZEOS International, Ltd., Micron Computer, Inc., and Micron Custom
Manufacturing Services, Inc. (MCMS) merge to become Micron Electronics, Inc.
1997
Micron becomes one of the first companies in the U.S. to attain ISO 14001
certification.
Micron receives the EPA’s Evergreen Award for environmental responsibility.
Dell Computer announces it has received 256-megabit DRAM samples from Micron.
1998
Micron becomes one of the largest memory producers in the world with the
purchase of Texas Instruments' worldwide memory operations.
Intel invests $500 million in Micron to support the development and supply of
next-generation memory products.
1999
Crucial Technology launches its direct memory upgrade business in the United
Kingdom.
Micron opens the UK Design Centre to support Micron’s research and
development efforts, including the development of embedded products.
2000
The Micron Technology Foundation, Inc., is established to advance science and
technology education and support community organizations.
Micron establishes test operations in Lehi, Utah, and opens a module assembly
and testing operation in the United Kingdom.
The Company announces a 2-for-1 stock split.
2001
KMT Semiconductor, Ltd., in Nishiwaki City, Japan, becomes a wholly-owned
subsidiary with Micron’s purchase of Kobe Steel, Ltd.’s, interest in the
joint-venture operation.
Micron is ranked #1 in the semiconductor industry by the Massachusetts
Institute of Technology's Technology Review magazine in its Patent
Scorecard 2001.
2002
Micron acquires Toshiba's commodity DRAM operations at Dominion Semiconductor,
LLC, a subsidiary of Toshiba Corporation of Japan, located in Manassas,
Virginia.
Micron demonstrates the industry’s first 1-gigabit double data rate (DDR)
SDRAM components manufactured on 0.11µm process technology.
2003
Micron delivers the industry's first 4-gigabyte DDR SDRAM registered dual
in-line memory module (DIMM) to Intel using the Company's 1-gigabyte DDR SDRAM
manufactured on the 0.11µm process.
Micron introduces the 1.3-megapixel CMOS image sensor, which achieves image
quality comparable to CCD while taking advantage of the benefits of CMOS
technology.
2004
Semiconductor Insights, the leader in technical and patent analyses
of ICs, awards Micron’s 6F2 cell architecture the 2004 INSIGHT
Award for Most Innovative DRAM.
Micron ships its first production 90nm, 2-gigabit NAND Flash memory products.
2005
Micron introduces the industry's fastest 1.8V Flash memory for mobile
applications.
Micron introduces a family of Mobile DRAM devices that provide low standby
power and improved stackability.
Micron introduces Endur-IC™ technology, which delivers low power
consumption, increased reliability, and an overall robustness required for
mobile applications.
Micron emerges as the number one provider of CMOS image sensors for camera
phones, capturing more than 30% of the market share.
Micron and Intel announce their agreement to form a new company—IM Flash
Technologies—to manufacture NAND Flash memory.
Boise manufacturing facility earns an award from the Pacific Northwest
section of the American Water Works Association for "Innovation and
Commitment to Water Conservation."
Micron’s DDR2 memory wins the prestigious AnandTech Editor’s Choice
Award for providing the best performance and value.
2006
Micron...
Introduces the industry's first NAND Flash memory device built on 50nm
process technology.
Introduces the world's first 8-megapixel image sensor on a 1/2.5-inch
optical format (based on a 1.75-micron pixel design).
Introduces the world's densest server memory module (16-gigabyte).
Announces development of a 1.4-micron pixel image sensor design.
Begins shipping 8-gigabit and 4-gigabit NAND Flash devices, ideal for MP3,
USB drive, and flash card applications.
Secures leadership position in digital image sensor products with 40%
market share.
Enters into joint-venture partnership with Intel,creating IM Flash
Technologies to manufacture NAND Flash memory.
Acquires Lexar Media to expand NAND Flash memory portfolio.
Expands assembly and test facility in Singapore and effectively doubles its
capacity.
Introduces Osmium™ packaging technology.
Receives #1 ranking in the semiconductor industry in iplQ's 2006 Patent
Scorecard for the fifth consecutive year.
Partners with Photronics on a leading-edge MP Mask Technology Center to
supply photomasks for high-density, low-power chips.
About Company
Overview
Micron is one of the world's largest companies focused on memory, storage
and imaging semiconductor products—from DRAM to NAND Flash to CMOS image
sensors. Micron's leading-edge semiconductor products are designed to add
differentiated value to the mobile, computing, server, automotive, networking,
security, industrial, consumer and medical applications its customers develop.
Innovative Technology
Through innovative design and understanding of customers' needs, Micron has
reliably empowered the market with next-generation digital technology since
the company was first founded in 1978. Micron is consistently ranked among the
top 10 patent holders in the United States and was a clear patent leader in
2005 with 82 patents per 1,000 employees. The company delivered higher-density
innovations such as 6F² years ahead of its competitors and has pushed the
boundaries of imaging technology with the development of the industry's first
1.7-micron pixel image sensor.
Micron continues to enable customers across multiple computing
applications, including desktops, notebooks, and servers, with its broad
portfolio of DDR2 products. The company's very low profile (VLP) DDR and DDR2
registered DIMM modules are ideal for server applications such as rack-mounted
blade servers, giving server system designers a 62 percent reduction in memory
area compared to other registered DIMM designs.
Micron is an industry leader in accelerating development of next-generation
digital innovations for its world-leading customers. The superior image
quality of its imaging products has helped Micron become the number one
provider of CMOS image sensors. Micron has driven industry standards for PSRAM
in the mobile market and has emerged as a market leader. Looking forward,
Micron's technology will fuel the next-generation of NAND Flash memory as the
company works with Intel through the IM Flash Technologies venture to continue
to meet the needs of this rapidly growing segment.
Stock Information
Micron Technology, Inc. , became a publicly held company in June 1984 with
the sale of 2.2 million shares of common stock at an initial price of $14 per
share (22 million shares at $1.40 adjusted for splits). The Company was
initially listed on the NASDAQ exchange under the "DRAM" symbol.
In November 1990, Micron was listed on the New York Stock Exchange (NYSE),
where its common stock trades today under the "MU" symbol. At
September 1, 2005, the Company had 616 million shares outstanding and an
aggregate market cap of $7.2 billion.
Facilities
Micron has operations in 19 countries to provide design, manufacturing, and
sales and support to customers on a worldwide basis. The close coordination of
research, manufacturing, and support functions enables Micron to deliver
high-quality products meeting our customers' demands while achieving low cost
production through decreased manufacturing cycle times and increased yields.
The Company has wholly owned wafer fabrication facilities in Boise, Idaho;
Manassas, Virginia; Avezzano, Italy; Nishiwaki City, Japan; joint venture
interest in fabrication operations at TECH Semiconductor in Singapore; wholly
owned assembly and test operations in Boise, Idaho and Singapore; and memory
module assembly operations in Boise, Idaho; Singapore; East Kilbride,
Scotland; and Aguadilla, Puerto Rico. IM Flash Technologies (IMFT), Micron's
joint venture with Intel, will be producing NAND flash at Micron's Virginia
and Boise fabrication facilities, as well as at IMFT's facility in Lehi, UT
which Micron contributed to the joint venture.
| Address: |
Micron Technology, Inc. 8000 S. Federal Way P.O. Box 6 Boise, ID |
City: State:: |
| Contact: |
|
Phone: 208-368-4000 Fax:: 208-368-4435 |
| Website: |
http://www.micron.com/ |
Email: |
| Registered: |
27 March, 2007 12:29 |
| Company Products: |
1.3 Megapixel, 2 Megapixel, 3.1 Megapixel, 5 Megapixel, 8 Megapixel, Burst A/D MUX PSRAM, CellularRAM, CMOS Imaging Technical and Customer Service Notes, CMOS Lens Selection and Suppliers, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, FBDIMM, High Speed, Managed NAND, MCP Webinar, MiniDIMM, Mobile DDR SDRAM, Mobile SDRAM, Motherboard Tests, NAND Flash Applications, NAND Flash Software, NAND Flash Technical Notes, PSRAM Technical Notes, RDIMM, RLDRAM® Memory, SDRAM, SODIMM, UDIMM, VGA, VLP DIMM, VLP MiniDIMM |
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